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BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
Rev. 01 -- 22 October 2009 Product data sheet
1. Product profile
1.1 General description
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1]
[1] [2]
f (MHz) 2500 to 2700
VDS (V) 28
PL(AV) (W) 9
PL(M) Gp (W) 75 (dB) 17
D 23
ACPR885k ACPR1980k (dBc) -60[2] -50[2]
(%) (dBc)
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. Measured within 30 kHz bandwidth.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and 2700 MHz, a supply voltage of 28 V and an IDq of 600 mA: N Average output power = 9 W N Power gain = 17 dB N Drain efficiency = 23 % N ACPR885 = -50.0 dBc in 30 kHz bandwidth I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2500 MHz to 2700 MHz) I Internally matched for ease of use
NXP Semiconductors
BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3 Applications
I RF power amplifiers for base stations and multicarrier applications in the 2500 MHz to 2700 MHz frequency range
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
Graphic symbol
BLF6G27-75 (SOT502A)
1 1 3 2 2 3
sym112
BLF6G27LS-75 (SOT502B) 1 2 3 drain gate source
[1]
1 3 2 2
1
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Package Name BLF6G27-75 BLF6G27LS-75 Description flanged LDMOST ceramic package; 2 mounting holes; 2 leads earless flanged LDMOST ceramic package; 2 leads Version SOT502A SOT502B Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj
BLF6G27-75_6G27LS-75_1
Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature
Conditions
Min -0.5 -65 -
Max 65 +13 18 +150 200
Unit V V A C C
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 October 2009
2 of 14
NXP Semiconductors
BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
5. Thermal characteristics
Table 5. Symbol Rth(j-case) Thermal characteristics Parameter Conditions Type Typ 0.85 0.75 Unit K/W K/W thermal resistance from Tcase = 80 C; BLF6G27-75 junction to case PL = 60 W (CW) BLF6G27LS-75
6. Characteristics
Table 6. Characteristics Tj = 25 C per section; unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 100 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = +11 V; VDS = 0 V VDS = 10 V; ID = 5 A VGS = VGS(th) + 3.75 V; ID = 3.5 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 1.4 14.9 Typ 2 18 7 0.14 1.6 Max 2.4 3 300 0.25 Unit V V A A nA S pF
7. Application information
Table 7. Application information Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth is 1.2288 MHz; f1 = 2500 MHz; f2 = 2600 MHz; f3 = 2700 MHz; RF performance at VDS = 28 V; IDq = 600 mA; Tcase = 25 C; unless otherwise specified, in a class-AB production circuit. Symbol Gp RLin D ACPR885k ACPR1980k PL(M)
[1] [2]
Parameter power gain input return loss drain efficiency adjacent channel power ratio (885 kHz) adjacent channel power ratio (1980 kHz) peak output power
Conditions PL(AV) = 9 W PL(AV) = 9 W PL(AV) = 9 W PL(AV) = 9 W PL(AV) = 9 W
[1]
Min 15 70
Typ 17 -10 -50 -60 75
Max -45 -55 -
Unit dB dB % dBc dBc W
19.0 23
[1]
[2]
Measured within 30 kHz bandwidth. Measured at 2.7 GHz and 3 dB compression of the CCDF at 0.01 % probability.
BLF6G27-75_6G27LS-75_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 October 2009
3 of 14
NXP Semiconductors
BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
7.1 Ruggedness in class-AB operation
The BLF6G27-75 and BLF6G27LS-75 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 600 mA; PL = 65 W (CW); f = 2500 MHz.
7.2 One-tone CW
20 Gp (dB) 18
(1) (3) (2)
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D (%) 60 50 40 30 20
(2) (1) (3)
70
001aak975
16
14
12 10 10 0 20 40 60 PL (W) 80 0 0 20 40 60 PL (W) 80
VDS = 28 V; IDq = 600 mA. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz
VDS = 28 V; IDq = 600 mA. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz
Fig 1.
Power gain as a function of load power; typical values
Fig 2.
Drain efficiency as a function of load power; typical values
BLF6G27-75_6G27LS-75_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 October 2009
4 of 14
NXP Semiconductors
BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
7.3 Single carrier IS-95
19 Gp (dB) 18
001aak976
50 D (%) 40
(2) (1) (3)
001aak977
17
(1) (3) (2)
30
16
20
15
10
14 0 10 20 30 40 PL (W) 50
0 0 10 20 30 40 PL (W) 50
VDS = 28 V; IDq = 600 mA. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz
VDS = 28 V; IDq = 600 mA. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz
Fig 3.
Power gain as a function of load power; typical values
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Fig 4.
Drain efficiency as a function of load power; typical values
001aak979
-20 ACPR885k (dBc) -30
-40 ACPR1980k (dBc) -50
-40
(2) (1) (3)
-60
(1) (2) (3)
-50
-60
-70
-70 0 10 20 30 40 PL (W) 50
-80 0 10 20 30 40 PL (W) 50
VDS = 28 V; IDq = 600 mA. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz
VDS = 28 V; IDq = 600 mA. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz
Fig 5.
Adjacent channel power ratio (885 kHz) as a function of load power; typical values
Fig 6.
Adjacent channel power ratio (1980 kHz) as a function of load power; typical values
BLF6G27-75_6G27LS-75_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 October 2009
5 of 14
NXP Semiconductors
BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
7.4 Single carrier W-CDMA
19 Gp (dB) 18
001aak980
60 D (%) 40
(2) (3) (1)
001aak981
17
(1) (3) (2)
16 20 15
14 0 10 20 30 40 PL (W) 50
0 0 10 20 30 40 PL (W) 50
VDS = 28 V; IDq = 600 mA. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz
VDS = 28 V; IDq = 600 mA. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz
Fig 7.
Power gain as a function of load power; typical values
001aak982
Fig 8.
Drain efficiency as a function of load power; typical values
001aak983
-10 ACPR5M (dBc) -20
-20 ACPR10M (dBc) -30
-30
(2) (1) (3)
-40
(1) (2) (3)
-40
-50
-50
-60
-60 0 10 20 30 40 PL (W) 50
-70 0 10 20 30 40 PL (W) 50
VDS = 28 V; IDq = 600 mA. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz
VDS = 28 V; IDq = 600 mA. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz
Fig 9.
Adjacent channel power ratio (5 MHz) as a function of load power; typical values
Fig 10. Adjacent channel power ratio (10 MHz) as a function of load power; typical values
BLF6G27-75_6G27LS-75_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 October 2009
6 of 14
NXP Semiconductors
BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
7.5 2-carrier W-CDMA
19 Gp (dB) 18
001aak984
60 D (%) 40
(2) (3) (1)
001aak985
17
(1) (3) (2)
16 20 15
14 0 10 20 30 40 PL (W) 50
0 0 10 20 30 40 PL (W) 50
VDS = 28 V; IDq = 600 mA; carrier spacing = 10 MHz. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz
VDS = 28 V; IDq = 600 mA; carrier spacing = 10 MHz. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz
Fig 11. Power gain as a function of load power; typical values
-10 ACPR5M (dBc) -20
001aak986
Fig 12. Drain efficiency as a function of load power; typical values
-10 ACPR10M (dBc) -20
001aak987
-30
(3) (1) (2)
-30
(3) (2) (1)
-40
-40
-50
-50
-60 0 10 20 30 40 PL (W) 50
-60 0 10 20 30 40 PL (W) 50
VDS = 28 V; IDq = 600 mA; carrier spacing = 10 MHz. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz
VDS = 28 V; IDq = 600 mA; carrier spacing = 10 MHz. (1) f = 2500 MHz (2) f = 2600 MHz (3) f = 2700 MHz
Fig 13. Adjacent channel power ratio (5 MHz) as a function of load power; typical values
Fig 14. Adjacent channel power ratio (10 MHz) as a function of load power; typical values
BLF6G27-75_6G27LS-75_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 October 2009
7 of 14
NXP Semiconductors
BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
8. Test information
8.1 Impedance information
Table 8. Typical impedance Typical values per section unless otherwise specified. f GHz 2.5 2.6 2.7 ZS 5.3 - j7.7 8.7 - j8.7 12.2 + j0.4 ZL 6.0 - j3.3 4.7 - j2.6 3.9 - j2.4
drain ZL gate ZS
001aaf059
Fig 15. Definition of transistor impedance
8.2 Test circuit
C5
R1 C6 C2 C3 R2 B1 C7
C1
C4
BLF6G27-75 INPUT REV2 NXP
BLF6G27-75 OUTPUT REV2 NXP
001aak988
Printed-Circuit Board (PCB) material: Taconic RF35 with r = 3.5 and thickness = 0.762 mm. See Table 9 for list of components.
Fig 16. Component layout
BLF6G27-75_6G27LS-75_1 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 October 2009
8 of 14
NXP Semiconductors
BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
Table 9. List of components See Figure 16 for component layout. Component B1 C1, C2, C3 C4 C5, C6 C7 R1, R2
[1] [2]
Description ferrite bead multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor SMD resistor
Value 13 pF 10 pF 4.7 F 220 F; 63 V 10
[1] [2]
Remarks
TDK SMD 1206
American Technical Ceramics type 100A or capacitor of same quality. American Technical Ceramics type 100B or capacitor of same quality.
BLF6G27-75_6G27LS-75_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 October 2009
9 of 14
NXP Semiconductors
BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
D
A
3
D1
F
U1 q C
B c
1
L
H
U2
p w1 M A M B M
E1
E
A
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
Fig 17. Package outline SOT502A
BLF6G27-75_6G27LS-75_1 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 October 2009
10 of 14
NXP Semiconductors
BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A F
3
D1 D
U1
c
L
1
H
U2
E1
E
2
b w2 M D M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.067 0.815 0.057 0.805
0.390 0.010 0.380
OUTLINE VERSION SOT502B
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 03-01-10 07-05-09
Fig 18. Package outline SOT502B
BLF6G27-75_6G27LS-75_1 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 October 2009
11 of 14
NXP Semiconductors
BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
10. Abbreviations
Table 10. Acronym CCDF CW IS-95 LDMOS LDMOST N-CDMA PAR RF SMD VSWR W-CDMA WiMAX Abbreviations Description Complementary Cumulative Distribution Function Continuous Wave Interim Standard 95 Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Narrowband Code Division Multiple Access Peak-to-Average power Ratio Radio Frequency Surface Mounted Device Voltage Standing-Wave Ratio Wideband Code Division Multiple Access Worldwide Interoperability for Microwave Access
11. Revision history
Table 11. Revision history Release date Data sheet status Product data sheet Change notice Supersedes Document ID
BLF6G27-75_6G27LS-75_1 20091022
BLF6G27-75_6G27LS-75_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 October 2009
12 of 14
NXP Semiconductors
BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
12.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF6G27-75_6G27LS-75_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 October 2009
13 of 14
NXP Semiconductors
BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
14. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 8 8.1 8.2 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Single carrier IS-95 . . . . . . . . . . . . . . . . . . . . . . 5 Single carrier W-CDMA . . . . . . . . . . . . . . . . . . 6 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Impedance information . . . . . . . . . . . . . . . . . . . 8 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 October 2009 Document identifier: BLF6G27-75_6G27LS-75_1

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